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European Physical Journal D

Volumn 35, Issue 3, 2005, Pages 505-511

Kinetic model of thin film growth by vapor deposition

(4) Gordiets, B F a,b Andujar J L a Corbella, C a Bertran, E a

a UNIVERSITY OF BARCELONA (Spain)

b LEBEDEV PHYSICAL INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON FILMS; CARBON NITRIDE; ENTERTAINMENT INDUSTRY; FILM GROWTH; ION BEAM ASSISTED DEPOSITION; ION BEAMS; KINETIC PARAMETERS; KINETIC THEORY; PHYSICAL VAPOR DEPOSITION; SILANES; SILICON;

ANALYTICAL AND NUMERICAL SOLUTIONS; BEAM ASSISTED PROCESS; CARBON NITRIDE THIN FILMS; ELEMENTARY PROCESS; EXPERIMENTAL CHARACTERISTICS; GAS-PHASE COMPONENTS; R.F. MAGNETRON SPUTTERING; SURFACE INTERACTIONS;

THIN FILMS;

EID: 24944500050 PISSN: 14346060 EISSN: 14346079 Source Type: Journal
DOI: 10.1140/epjd/e2005-00084-x Document Type: Article

Times cited : (8)

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