Effects of (NH 4 ) 2 S x treatment on surface work function and roughness of indium-tin-oxide

Applied Surface Science

Volumn 253, Issue 8, 2007, Pages 3957-3961

  Lin, Yow Jon ^a   You, Chang Feng ^a   Tsai, Chia Lung ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

ITO; Surface treatment; Work function; XPS

Indexed keywords

ATOMIC FORCE MICROSCOPY; OPACITY; SURFACE ROUGHNESS; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ITO; PROBE MEASUREMENTS; SHEET RESISTANCE; WORK FUNCTION;

INDIUM COMPOUNDS;

EID: 33846561541     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.08.032     Document Type: Article

References (30)

1. Tang C.W., and VanSlyke S.A. Appl. Phys. Lett. 51 (1987) 913
2. Lin Y.J., Chou W.Y., and Lin S.T. Appl. Phys. Lett. 88 (2006) 071108
3. Lee K.H., Jang H.W., Kim K.B., Tak Y.H., and Lee J.L. J. Appl. Phys. 95 (2004) 586
4. Parker I.D. J. Appl. Phys. 75 (1994) 1656
5. Shewchun J., Dubow J., Wilmsen C.W., Singh R., Burk D., and Wager J.F. J. Appl. Phys. 50 (1979) 2832
6. Bakasybramanian N., and Subrahmanyam A. J. Electrochem. Soc. 138 (1991) 322
7. Wu C.C., Wu C.I., Strum J.C., and Kahn A. Appl. Phys. Lett. 70 (1997) 1348
8. Mason M.G., Hung L.S., Tang C.W., Lee S.T., Wong K.W., and Wang M. J. Appl. Phys. 86 (1999) 1688
9. Swint A.L., and Bohn P.W. Appl. Phys. Lett. 84 (2004) 61
10. Milliron D.J., Hill I.G., Shen C., Kahn A., and Schwartz J. J. Appl. Phys. 87 (2000) 572
11. Nu{combining double acute accent}esch F., Rothberg L.J., Forsythe E.W., Le Q.T., and Gao Y. Appl. Phys. Lett. 74 (1999) 880
12. Lin Y.J., Hsu C.W., Chen Y.M., and Wang Y.C. J. Electron. Mater. 34 (2005) L9
13. Lin Y.J., Wang Z.L., and Chang H.C. Appl. Phys. Lett. 81 (2003) 5183
14. Yu H.Y., Feng X.D., Grozea D., Lu Z.H., Sodhi R.N.S., Hor A.-M., and Aziz H. Appl. Phys. Lett. 78 (2001) 2595
15. Seo J.M., Kim Y.K., Lee H.G., Chung Y.S., and Kim S. J. Vac. Sci. Technol. A 14 (1996) 941
16. Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer Corp., Eden Prairie, MN, 1992.
17. Lin Y.J., and Lee C.T. J. Vac. Sci. Technol. B 19 (2001) 1734
18. Schlaf R., Merritt C.F., Crisafulli L.A., and Kafafi Z.H. J. Appl. Phys. 86 (1999) 5678
19. Kim S.Y., Baik J.M., Yu H.K., and Lee J.L. J. Appl. Phys. 98 (2005) 093707
20. Hu J., Pan J., Zhu F., and Gong H. J. Appl. Phys. 95 (2004) 6273
21. Rizzi A., and Lüth H. Appl. Phys. Lett. 80 (2002) 530
22. Kim S.Y., and Lee J.L. Appl. Phys. Lett. 87 (2005) 232105
23. Lin Y.J., Chu Y.L., Lin W.X., Chien F.T., and Lee C.S. J. Appl. Phys. 99 (2006) 073702
24. Fan J.C.C., and Goodenough J.B. J. Appl. Phys. 48 (1977) 3524
25. Mizuno M., Miyamoto T., Ohnishi T., and Hayashi H. Jpn. J. Appl. Phys. 36 (1997) 3408
26. Sapp S., Luebben S., Losovyj Y.B., Jeppson P., Schulz D.L., and Caruso A.N. Appl. Phys. Lett. 88 (2006) 152107
27. Kim K.B., Tak Y.H., Han Y.S., Baik K.H., Yoon M.H., and Lee M.H. Jpn. J. Appl. Phys. 42 (2003) L438
28. Kim H., Piqué A., Horwitz J.S., Mattoussi H., Murata H., Kafafi Z.H., and Chrisey D.B. Appl. Phys. Lett. 74 (1999) 3444
29. Chan I.M., Cheng W.C., and Hong F.C. Appl. Phys. Lett. 80 (2002) 13
30. Lin Y.J., Chou W.Y., Lin S.T., and Chen Y.M. Jpn. J. Appl. Phys. 44 (2005) L1218