Relationship between surface roughness of indium tin oxide and leakage current of organic light-emitting diode

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 4 B, 2003, Pages

  Kim, Ki Beom ^a   Tak, Yoon Heung ^b   Han, Yoon Soo ^b   Baik, Kwang Heum ^b   Yoon, Myung Hee ^b   Lee, Moon Ho ^a  

^a Yeungnam University   (South Korea)

^b LG Electronics Inc   (South Korea)

Author keywords

Indium tin oxide; Leakage current; Organic light emitting diode; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; MORPHOLOGY; SPUTTER DEPOSITION; SURFACE ROUGHNESS;

INDIUM TIN OXIDE; ORGANIC LIGHT EMITTING DIODE;

INDIUM COMPOUNDS;

EID: 0038608252     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l438     Document Type: Letter

References (6)

1. C. W. Tang and S. A. Vansklyke: Appl. Phys. Lett. 51 (1987) 913.
2. C. C. Wu, C. I. Wu, J. C. Sturm and A. Kahn, Appl. Phys. Lett. 70 (1997) 1348.
3. R. H. Friend, R. W. Gymer, A. B. Holmes, J. H. Burroughes, R. N. Marks, C. Taliani, D. D. C. Bradely, D. A. Dos Santos, J. L. Bredas, M. Logdlund and W. R. Salaneck: Nature 397 (1999) 121.
4. R. Castro-Rodriguez, A. I. Oliva, V. Sosa, F. Caballero-Briones and J. L. Pena: Appl. Surf. Sci. 161 (2000) 340.
5. L. Do, D. Hwang, H. Chu, S. Kim, J. Lee, H. Park and T. Zyung: Synth. Met. 111-112 (2000) 249.
6. Ch. Jonda, A. B. R. Mayer, U. Stolz, A. Elschner and A. Karbach: J. Mater. Sci. 35 (2000) 5635.