Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN

Applied Physics Letters

Volumn 81, Issue 27, 2002, Pages 5183-5185

  Lin, Yow Jon ^a   Wang, Zhi Long ^a   Chang, Hsing Cheng ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; NITROGEN; PHOTOLUMINESCENCE; SAPPHIRE; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY CONTACTS;

GALLIUM NITRIDE;

EID: 0347997276     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1533857     Document Type: Article

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