Reduction of gap states of ternary III-V semiconductor surfaces by sulfur passivation: Comparative studies of AIGaAs and InGaP

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 3, 1996, Pages 941-945

  Seo, J M ^a   Kim, Y K ^b   Lee, H G ^b   Chung, Y S ^b   Kim, S ^b  

^a Chonbuk National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342850912     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580419     Document Type: Review

References (18)

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15. The intensity variation of Ga 2p after sputtering is shown in Table I. Considering differences of escape depths for photoelectrons of Ga 3s and Ga 2p, 80% of the intensity of the sputtered surface. Fig. 3(c), was subtracted from that of the annealed surface. Fig. 3(b), to get the subtracted spectrum [(b) and (c)].
16. In Figs. 6(a)-6(c) the intensity is about 3 eV higher in binding energy and that of the bulk P 2p is hardly resolved.
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