Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation

Journal of Electronic Materials

Volumn 34, Issue 3, 2005, Pages

  Lin, Yow Jon ^a   Hsu, Chou Wei ^b   Chen, Yao Ming ^b   Wang, Yung Chi ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Excimer laser; Indium tin oxide (ITO); Work function

Indexed keywords

EXCIMER LASERS; LASER BEAM EFFECTS; LIGHT EMITTING DIODES; SEMICONDUCTING FILMS; SURFACE CHEMISTRY; SURFACE TREATMENT; TIN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM THICKNESS; INDIUM-TIN-OXIDE (ITO); PULSE DURATION; WORK FUNCTIONS;

INDIUM COMPOUNDS;

EID: 17144422845     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0220-4     Document Type: Article

References (10)

1. C.W. Tang and S.A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).
2. H. Burroughes, D.D.C. Bradley, A.R. Brown, R.N. Marks, K. Mackay, R.H. Friend, P.L. Burns, and A.B. Holmes, Nature (London) 347, 539 (1990).
3. K.H. Lee, H.W. Jang, KB. Kim, Y.H. Tak, and J.L. Lee, J. Appl. Phys. 95, 586 (2004).
4. C.C. Wu, C.I. Wu, J.C. Strum, and A. Kahn, Appl. Phys. Lett. 70, 1348 (1997).
5. M.G. Mason, L.S. Hung, C.W. Tang, S.T. Lee, K.W. Wong, and M. Wang, J. Appl. Phys. 86, 1688 (1999).
6. A.L. Swint and P.W. Bohn, Appl. Phys. Lett. 84, 61 (2004).
7. D.J. Milliron, I.G. Hill, C. Shen, A. Kahn, and J. Schwartz, J. Appl. Phys. 87, 572 (2000).
8. F. Nuesch, L.J. Rothberg, E.W. Forsythe, Q.T. Le, and Y. Gao, Appl. Phys. Lett. 74, 880 (1999).
9. J.C.C. Fan and J.B. Goodenough, J. Appl. Phys. 48, 3524 (1977).
10. M. Mizuno, T. Miyamoto, T. Ohnishi, and H. Hayashi, Jpn. J. Appl. Phys. Part 1 36, 3408 (1997).