Mechanism for the increase of indium-tin-oxide work function by O 2 inductively coupled plasma treatment

Journal of Applied Physics

Volumn 95, Issue 2, 2004, Pages 586-590

  Lee, Kwang Ho ^a   Jang, Ho Won ^a   Kim, Ki Beom ^b   Tak, Yoon Heung ^b   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; FERMI LEVEL; INDUCTIVELY COUPLED PLASMA; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; NICKEL COMPOUNDS; OPTOELECTRONIC DEVICES; OXIDATION; OXYGEN; PHOTOEMISSION; SURFACE TREATMENT; SYNCHROTRON RADIATION; TRANSPARENCY; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM THICKNESS; WORK FUNCTIONS (WF);

INDIUM COMPOUNDS;

EID: 0742303031     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633351     Document Type: Article

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