γ-LiAlO2 single crystal: A novel substrate for GaN epitaxy

Journal of Crystal Growth

Volumn 193, Issue 1-2, 1998, Pages 127-132

  Ke, Xu ^a   Jun, Xu ^a   Peizhen, Deng ^a   Yongzong, Zhou ^a   Guoqing, Zhou ^a   Rongsheng, Qiu ^a   Zujie, Fang ^a  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

Author keywords

Crystal growth; Defect; Epitaxy; GaN; LiAlO2; Substrate

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; EPITAXIAL GROWTH; ETCHING; LITHIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SOLIDIFICATION; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; LATTICE MISMATCH; TEMPERATURE GRADIENT TECHNIQUE;

CRYSTAL GROWTH;

EID: 0032475311     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00469-2     Document Type: Article

References (8)

1. S. Nakamura, T. Mukai, M. Senoh, Appl. Phys. Lett. 64 (1994) 1687.
2. S. Nakamura, M. Senoh, Shin-ichi Nagahaman, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyo, Appl. Phys. Lett. 70 (1997) 868.
3. S.D. Lester, F.A. Ponce, M.G. Craford, D.A. Steigerwald, Appl. Phys. Lett. 66 (1995) 1249.
4. P. Kung, A. Saxler, X. Zhang, D. Walker, R. Lavado, M. Razeghi, Appl. Phys. Lett. 69 (1996) 2116.
5. S. Strite, H. Morkov, J. Vac. Sci. Technol. B 10 (1992) 1237.
6. T. Ishii, Y. Tazoh, S. Miyazawa, Jpn. J. Appl. Phys. 36 (1997) L139.
7. B. Cockayne, B. Lent, J. Crystal Growth 54 (1981) 546.
8. M. Marezio, Acta Crystallogr. 19 (1965) 396.