A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2025-2033

  Navarro, Dondee ^b   Takeda, Youichi ^c   Miyake, Masataka ^b   Nakayama, Noriaki ^d   Machida, Ken ^e   Ezaki, Tatsuya ^b   Mattausch, Hans Jürgen ^a,b   Miura Mattausch, Mitiko ^a,b  

^a IEEE

^b HIROSHIMA UNIVERSITY   (Japan)

^c SANYO ELECTRIC CO LTD   (Japan)

^d SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

^e TCAD International Inc   (Japan)

Author keywords

Harmonic distortion (HD); Hiroshima University STARC IGFET model (HiSIM); Nonquasi static (NQS) effect; Surface potential based MOSFET model

Indexed keywords

CARRIER MOBILITY; CIRCUIT SIMULATION; HARMONIC DISTORTION; SEMICONDUCTOR DEVICE MODELS; SURFACE POTENTIAL;

CHANNEL CHARGING; COMPUTATIONAL COSTS; HIROSHIMA UNIVERSITY STARC IGFET MODEL (HISIM); NONQUASI-STATIC (NQS) EFFECT;

MOSFET DEVICES;

EID: 33846101299     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.880827     Document Type: Article

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