Large signal non-quasi-static MOS model for RF circuit simulation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 163-166

  Scholten, A J ^a   Tiemeijer, L F ^a   de Vreede, P W H ^a   Klaassen, D B M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; FREQUENCIES; GAIN MEASUREMENT; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

NONQUASI STATIC MODEL; POWER GAIN; SOFTWARE PACKAGE BSIM3; SOFTWARE PACKAGE MOS MODEL 9;

SEMICONDUCTOR DEVICE MODELS;

EID: 0033342063     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)