A self-consistent non-quasi-static MOSFET model for circuit simulation based on transient carrier response

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2132-2136

  Nakayama, Noriaki ^a   Ueno, Hiroaki ^a   Inoue, Tetsuhiro ^a   Isa, Takashi ^a   Tanaka, Masayasu ^a   Miura Mattausch, Mitiko ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Carrier transit time; Circuit simulation; Non quasi static MOSFET model; Transient carrier response

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENTS; EQUIVALENT CIRCUITS; INTEGRAL EQUATIONS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE MODELS;

CIRCUIT SIMULATION; NON QUASI STATIC MOSFET MODEL; NONQUASI STATIC EFFECT; TRANSIENT CARRIER RESPONSE;

MOSFET DEVICES;

EID: 0038686442     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2132     Document Type: Article

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