Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 71-74

  Ueno, H ^a   Jinbou, S ^a   Kawano, H ^a   Morikawa, K ^a   Nakayama, N ^a   Miura Mattausch, A ^a   Mattausch, H J ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Capacitance; Circuit simulation; Current density; Cutoff frequency; Equivalent circuits; Intrusion detection; MOSFET circuits; Poisson equations; Predictive models; Threshold voltage

Indexed keywords

CAPACITANCE; CURRENT DENSITY; CUTOFF FREQUENCY; EQUIVALENT CIRCUITS; FREQUENCY RESPONSE; INTRUSION DETECTION; MOSFET DEVICES; POISSON EQUATION; SEMICONDUCTOR DEVICES; THRESHOLD VOLTAGE;

BIAS CONDITIONS; CONTINUITY EQUATIONS; DRIFT-DIFFUSION APPROXIMATION; HIGH FREQUENCY RESPONSE; MOSFET CIRCUITS; PREDICTIVE MODELS; QUASISTATIC APPROXIMATIONS; SMALL-SIGNAL RESPONSE;

CIRCUIT SIMULATION;

EID: 84948748164     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034519     Document Type: Conference Paper

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