A compact non-quasi-static extension of a charge-based MOS model

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1647-1654

  Porret, Alain Serge ^b   Sallese, Jean Michel ^c   Enz, Christian C ^a,d  

^a IEEE

^b UKOM Inc   (United States)

^c EPFL   (Switzerland)

^d CSEM   (Switzerland)

Author keywords

Charge sheet model; Compact modeling; EKV model; MOS transistor modeling; Non quasi static (NQS)

Indexed keywords

MOS DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

CHARGE BASED MOS MODEL; NON-QUASI-STATIC EFFECTS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0035424932     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936582     Document Type: Article

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