Non-quasi-static model for MOSFET based on carrier-transit delay

Electronics Letters

Volumn 40, Issue 4, 2004, Pages 276-278

  Nakayama, N ^a   Navarro, D ^a   Tanaka, M ^a   Ueno, H ^a   Miura Mattausch, M ^a   Mattausch, H J ^a   Ohguro, T ^b   Kumashiro, S ^b   Taguchi, M ^b   Kage, T ^b   Miyamoto, S ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b Semiconductor Technology Academic Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; FUNCTIONS; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; SIMULATORS; SWITCHING;

CARRIER DYNAMICS; CIRCUIT SIMULATORS;

MOSFET DEVICES;

EID: 12144285816     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040054     Document Type: Article

References (10)

1. Yang, AT., Liu, Y., and Yao, J.T.: 'An efficient nonquasi-static diode model for circuit simulation', IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., 1994, 13, (2), pp. 231-239
2. Scholten, A.J., et al.: 'Compact MOS modeling for RF CMOS circuit simulation'. Proc. Simulation of Semiconductor Processes and Devices (SISPAD 01), Athens, Greece, (Springer, Wien, 2001), pp. 194-201
3. Chan, M.K., et al.: 'A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation', IEEE Trans. Electron Devices, 1998, 45, (4), pp. 834-841
4. Sze, S.M.: 'Physics of semiconductor devices' (Wiley-Interscience, New York, 1981, 2nd edn), Ch. 1, p. 50
5. Oh, S.-Y., Ward, D.E., and Dutton, R.W.: Transient analysis of MOS transistors', IEEE Trans. Electron Devices, 1980, ED-27, (8), pp. 1571-1578
6. 'HiSIM1.2.0 User's Manual' http://www.starc.or.jp/kaihatsu/pdgr/hisim/index.html
7. Miura-Mattausch, M., et al.: 'Unified complete MOSFET model for analysis of digital and analog circuits', IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., 1996, 15, (1), pp. 1-7
8. Miura-Mattausch, M., et al.: 'Circuit simulation models for coming MOSFET generations', IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2002, E85-A, pp. 740-748
9. Miura-Maltausch, M., et al.: 'Circuit-simulation model of Cgd changes in small-size MOSFETs due to high channel-field gradients', IEICE Trans. Electron., 2003, E86-C, p. 1009
10. 'MEDICI User's Manual', Synopsys, 2002.