A New Approach to Model Nonquasi-Static (NQS) Effects for MOSFETs - Part I: Large-Signal Analysis

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2393-2400

  Roy, Ananda S ^a   Vasi, Juzer M ^a,b   Patil, Mahesh B ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b IEEE   (United States)

Author keywords

Large signal MOS transistor model; MOSFET compact model; Nonquasi static (NQS) effect

Indexed keywords

BOUNDARY CONDITIONS; CAPACITORS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; GALERKIN METHODS; PARTIAL DIFFERENTIAL EQUATIONS; TRANSISTORS; VARIATIONAL TECHNIQUES;

LARGE-SIGNAL ANALYSIS; NONQUASI-STATIC (NQS) EFFECTS;

MOSFET DEVICES;

EID: 0347499566     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819053     Document Type: Article

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