Importance of ballistic carriers for the dynamic response in sub-100 nm MOSFETs

IEEE Electron Device Letters

Volumn 23, Issue 3, 2002, Pages 154-156

  Okagaki, T ^b   Tanaka, M ^b   Ueno, H ^b   Miura Mattausch, Mitiko ^a,b  

^a IEEE

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Charge carrier processes; High speed electronics; MOSFETs; Time domain analysis

Indexed keywords

APPROXIMATION THEORY; BALLISTICS; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC FIELDS; MONTE CARLO METHODS; TIME DOMAIN ANALYSIS;

HIGH SPEED ELECTRONICS;

MOSFET DEVICES;

EID: 0036503663     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.988822     Document Type: Article

References (8)

1. High frequency AC characteristics of 1.5 nm gate oxide MOSFETs
2. Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
3. The ballistic nano-transistor
4. The Si MOSFET from a transmission viewpoint
5. On the accuracy and efficiency of substrate current calculation for sub-μm n-MOSFETs
6. Transient analysis of MOS transistors
7. Significance of the channel-charge partition in the transient MOSFET model