SCOPUS 정보 검색 플랫폼

Volumn 200, Issue 1-4 SPEC. ISS., 2005, Pages 258-263

Effects of annealing temperature on the characteristics of silicate/ HfO2 insulator formed on the p-Si/Si0.8 Ge0.2 and p-Si/Si0.8Ge0.2/intrinsic-Si (20Å) substrates

(4) Jeong, S H a Roh, Y a Lee, N E a Yang, C W a

a Sungkyunkwan University (South Korea)

Author keywords

Ge segregation; HfO2; SiGe

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; DIFFUSION; FILMS; HAFNIUM COMPOUNDS; MAGNETRON SPUTTERING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SPUTTER DEPOSITION; THERMAL EFFECTS;

GERMANIUM SEGREGATION; HAFNIUM DIOXIDE; HIGH TEMPERATURE ANNEALING; SILICON GERMANIDE;

ELECTRIC INSULATORS;

ANNEALING;

EID: 24644520328 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/j.surfcoat.2005.02.025 Document Type: Article

Times cited : (2)

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