Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen

Applied Physics Letters

Volumn 85, Issue 18, 2004, Pages 4034-4036

  Losurdo, Maria ^a   Giangregorio, Maria M ^a   Bruno, Giovanni ^a   Brown, April ^b   Kim, Tong Ho ^b  

^a CNR   (Italy)

^b Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; GALLIUM NITRIDE; INTERFACES (MATERIALS); NITROGEN; PLASMAS; REACTION KINETICS; SILICON CARBIDE;

NITRIDATION; REAL-TIME MONITORING; SPECTROSCOPIC ELLIPSOMETRY (SE);

SURFACE TREATMENT;

EID: 10044235307     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814438     Document Type: Article

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