The effect of gallium adsorbate on SiC(0001) surface for GaN by MBE

Physica Status Solidi (B) Basic Research

Volumn 240, Issue 2, 2003, Pages 326-329

  Jeganathan, K ^a   Shimizu, M ^a   Ide, T ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344495498     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200303283     Document Type: Conference Paper

References (8)

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