Formation of a denuded zone in nitrogen-doped Czochralski silicon wafer treated by ramping anneals

Semiconductor Science and Technology

Volumn 20, Issue 2, 2005, Pages 228-232

  Gong, Longfei ^a   Ma, Xiangyang ^a   Tian, Daxi ^a   Fu, Liming ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; IMAGE PROCESSING; NUCLEATION; OXYGEN; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STACKING FAULTS; SUPERSATURATION;

BULK-MICRODEFECTS (BMD); DENUDED ZONES (DZ); NITROGEN-DOPED CZOCHRALSKI (NCZ); RAPID THERMAL PROCESS (RTP);

SILICON WAFERS;

EID: 13644277699     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/2/022     Document Type: Article

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