The influences of carbon, hydrogen and nitrogen on the floating zone growth of four inch silicon crystals

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 209-212

  Wolf, E ^a   Schroder W ^a   Riemann, H ^a   Lux, B ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Carbon; Hydrogen; Nitrogen; Silicon

Indexed keywords

EID: 0000497801     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01287-7     Document Type: Article

References (5)

1. H. Föll, U. Gösele and B.O. Kolbesen, J. Cryst. Growth, 40 (1977) 90.
2. A.J.R. de Kock, P.J. Roksnoer and P.G.T. Boonen, J. Cryst. Growth, 30 (1975) 279.
3. E. Wolf, Phys. Stat. Sol. (a), 70 (1982) K59.
4. E. Wolf and W. Schröder, Cryst. Res. Tech., 22 (1987) K21.
5. K.E. Breuer, Thesis, University of München, 1981.