Improve molecular beam epitaxy growth of HgCdTe on CdZnTe (211)B substrates using interfacial layers of HgTe/CdTe superlattices

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Chang, Yong ^a   Grein, C H ^a   Zhao, J ^a   Sivanathan, S ^a   Wang, C Z ^d   Aoki, T ^d   Smith, David J ^d   Wijewarnasuriya, P S ^b   Nathan, V ^c  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL LAYERS; MATERIAL PROPERTIES; PIT DENSITY;

EPITAXIAL GROWTH; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; SUPERLATTICES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

MERCURY COMPOUNDS;

EID: 33845747293     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2399890     Document Type: Article

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