High temperature HgCdTe/CdTe/Si infrared photon detectors by MBE

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4454, Issue , 2001, Pages 180-187

  Velicu, S ^a   Ashokan, R ^a   Grein, C H ^b   Sivananthan, S ^b   Boieriu, P ^c   Rafol, Don ^d  

^a Smart Pixel Inc   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c Cepir Ltd   (United States)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

HgCdTe; Infrared detectors; MBE; Room temperature operation

Indexed keywords

HETEROJUNCTIONS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; SILICON WAFERS; SUBSTRATES;

HETEROSTRUCTURE LAYERS; MERCURY CADMIUM TELLURIDE;

INFRARED DETECTORS;

EID: 0035760737     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.448173     Document Type: Article

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