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Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 78-84

Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping

(7) Chang, Yong a Badano, G a Jiang, E b Garland, J W a Zhao, J a Grein, C H a Sivananthan, S a

a UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

b Thermo Nicolet (United States)

Author keywords

A1. Composition; A1. Thickness; A1. Uniformity; A3. Molecular beam epitaxy; B1. HgCdTe

Indexed keywords

ARRAYS; COMPOSITION; ELLIPSOMETRY; INFRARED DETECTORS; INFRARED RADIATION; LIGHT MODULATION; MAPPING; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX; THICKNESS MEASUREMENT;

DETECTOR ARRAYS; HGCDTE; UNIFORMITY; WAFER COMPOSITION;

MERCURY COMPOUNDS;

EID: 15844383478 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.01.051 Document Type: Article

Times cited : (14)

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