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Volumn 57, Issue 18, 1998, Pages 11283-11294

Strain relaxation at the interface: Raman scattering experiments

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EID: 0009317599     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.11283     Document Type: Article
Times cited : (47)

References (19)
  • 1
    • 85001714913 scopus 로고    scopus 로고
    • See, for instance, M. A. Capano and R. J. Trew, MRS Bull. 3 (22), 19 (1997) and references therein.
    • MRS Bull. , vol.3 , pp. 19
    • Capano, M.1    Trew, R.2
  • 7
    • 3743054744 scopus 로고    scopus 로고
    • see also J. M. Bluet, L. A. Falkovsky, N. Planes, and J. Camassel, in Proceedings of the International Conference on SiC, III-Nitrides and Related Materials, Stockholm, 1997 [Mater. Sci. Forum264-268, 395 (1998)].
    • (1998) Mater. Sci. Forum , vol.264-268 , pp. 395
    • Bluet, J.1    Falkovsky, L.2    Planes, N.3    Camassel, J.4
  • 9
    • 85037883286 scopus 로고    scopus 로고
    • H. Harima and S.-I. Nakashima, in Silicon Carbide and Related Materials 1995, edited by S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima, IOP Conf. Proc. No. 142 (Institute of Physics and Physical Society, London, 1996), p. 365.
    • (1996) IOP Conf. Proc. , pp. 365
    • Harima, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.