Simultaneous measurement of nanoprobe indentation force and photoluminescence of InGaAs/GaAs quantum dots and its simulation

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 36, Issue 1, 2007, Pages 1-11

  Liang, Yuan Hua ^a   Arai, Yoshio ^a   Ozasa, Kazunari ^b   Ohashi, Masane ^a   Tsuchida, Eiichiro ^a  

^a SAITAMA UNIVERSITY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Finite elements; Nanoprobe indentation; Photoluminescence; Quantum dots; Strain

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; INDENTATION; PHOTOLUMINESCENCE; PROBES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN CONTROL;

BAND STRAIN; ENERGY SHIFT RATE; ENERGY SHIFTS; NANOPROBE INDENTATION SYSTEMS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33845697613     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.06.023     Document Type: Article

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