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Volumn 39, Issue 4 B, 2000, Pages 2341-2343
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Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications
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Author keywords
High power; InGaAs; Laser diode; MBE; MOCVD; Quantum dot
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Indexed keywords
CHARGE CARRIERS;
DIFFUSION IN SOLIDS;
ELECTRIC POWER SUPPLIES TO APPARATUS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR QUANTUM DOTS;
SUBSTRATES;
ALUMINUM GALLIUM ARSENIDE;
CATASTROPHIC OPTICAL DAMAGE;
INDIUM GALLIUM ARSENIDE PHOSPHIDE;
NONRADIATIVE SURFACE RECOMBINATION;
QUANTUM DOT LASER;
QUANTUM WELL LASERS;
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EID: 0033689412
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.2341 Document Type: Article |
Times cited : (35)
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References (14)
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