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Volumn 39, Issue 4 B, 2000, Pages 2341-2343

Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications

Author keywords

High power; InGaAs; Laser diode; MBE; MOCVD; Quantum dot

Indexed keywords

CHARGE CARRIERS; DIFFUSION IN SOLIDS; ELECTRIC POWER SUPPLIES TO APPARATUS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

EID: 0033689412     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2341     Document Type: Article
Times cited : (35)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.