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Volumn 188, Issue 1-4, 1998, Pages 370-376

In situ composition control of self-organized InGaAs dots

Author keywords

Arsenic phosphorus replacement; Chemical beam epitaxy; Dot formation process; In situ control of dots; InGaAs dots

Indexed keywords

ARSENIC; CHEMICAL BEAM EPITAXY; COALESCENCE; COMPOSITION EFFECTS; PHOSPHORUS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SURFACE STRUCTURE;

EID: 0032096795     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00049-9     Document Type: Article
Times cited : (17)

References (25)
  • 17
    • 0029359206 scopus 로고
    • F. Riesz, Vacuum 46 (1995) 1021.
    • (1995) Vacuum , vol.46 , pp. 1021
    • Riesz, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.