Basic analysis of atomic-scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactant

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 1725-1728

  Okada, Yoshitaka ^a,b   Harris Jr , James S ^a  

^a STANFORD UNIVERSITY   (United States)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006276750     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588547     Document Type: Article

References (20)

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