MOMBE growth studies of GaN using metalorganic sources and nitrogen

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 499-504

  Li, T ^a   Campion, R P ^a   Foxon, C T ^a   Rushworth, S A ^b   Smith, L M ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b Epichem Ltd   (United Kingdom)

Author keywords

A3. Metalorganic molecular beam epitaxy; B1. GaN; B2. Semiconducting materials

Indexed keywords

GALLIUM NITRIDE; MASS SPECTROMETRY; ORGANOMETALLICS; REACTION KINETICS; SEMICONDUCTOR GROWTH; ULTRAHIGH VACUUM;

METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

MOLECULAR BEAM EPITAXY;

EID: 0037381461     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02470-3     Document Type: Conference Paper

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