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Volumn 595, Issue , 2000, Pages

MOVPE growth of quaternary (Al,Ga,In)N for UV optoelectronics

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33751351866     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (1)

References (33)
  • 6
    • 0004077682 scopus 로고    scopus 로고
    • , Technical Report IPP 9/113 Max Planck-Institut fur Plasmaphysik, Garching, Germany
    • M. Mayer: SIMNRA User's Guide, Technical Report IPP 9/113 (Max Planck-Institut fur Plasmaphysik, Garching, Germany, 1997).
    • (1997) SIMNRA User's Guide
    • Mayer, M.1
  • 17
    • 0003114331 scopus 로고    scopus 로고
    • Semiconductors and Semimetals, v Academic Press, San Diego
    • S. M. Bedair, Gallium Nitride (GaN) I, Semiconductors and Semimetals, v50, p127 (1998), Academic Press, San Diego
    • (1998) Gallium Nitride (GaN) I , vol.50
    • Bedair, S.M.1
  • 33
    • 33751321528 scopus 로고    scopus 로고
    • private communication
    • S. F. Chichibu, private communication (1999).
    • (1999)
    • Chichibu, S.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.