Fe and Cu in Si: Lattice sites and trapping at implantation-related defects

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 167-171

  Wahl, U ^a,b   Correia, J G ^a,b,d   Rita, E ^a,b   Araujo J P ^c   Soares, J C ^b  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF PORTO   (Portugal)

^d CERN   (Switzerland)

Author keywords

Emission channeling; Gettering; Implantation damage; Si:Cu; Si:Fe

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON TRAPS; ION IMPLANTATION; SINGLE CRYSTALS; SUBSTITUTION REACTIONS;

EMISSION CHANNELING; IMPLANTATION DAMAGES; NEAR-TETRAHEDRAL INTERSTITIAL SITES; ROOM TEMPERATURE;

SEMICONDUCTING SILICON;

EID: 33751331726     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.053     Document Type: Article

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