Simulation of metallic impurity gettering in silicon by MeV ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 322-328

  Brown, R A ^a   Kononchuk, O ^b,c   Rozgonyi, G A ^b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b North Carolina State University   (United States)

^c SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Gettering; Impurities; Ion implantation; Silicon; Simulation; Trapping

Indexed keywords

BORON; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); GETTERS; INTERFACIAL ENERGY; ION IMPLANTATION; MATHEMATICAL MODELS; PRECIPITATION (CHEMICAL); SUPERSATURATION;

METALLIC IMPURITY GETTERING;

SEMICONDUCTING SILICON;

EID: 0033513741     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00765-4     Document Type: Article

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