Identification of getter defects in high-energy self-implanted silicon at Rp/2

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 442-445

  Krause Rehberg, R ^a   Borner F ^a   Redmann, F ^a   Gebauer, J ^a   Kogler R ^b   Kliemann, R ^b   Skorupa, W ^b   Egger, W ^c   Kogel G ^c   Triftshauser W ^c  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Gettering; Positron annihilation; Rp 2; Self implantation; Silicon

Indexed keywords

ANNEALING; COPPER; DEFECTS; DIFFUSION; GETTERS; IMPURITIES; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SCANNING;

MUNICH SCANNING POSITRON MICROSCOPES; SELF-IMPLANTED SILICON;

SEMICONDUCTING SILICON;

EID: 4243433744     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00717-7     Document Type: Article

References (6)