Spatial distribution of defects in ion-implanted and annealed Si: The RP/2 effect

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 142, Issue 4, 1998, Pages 493-502

  Kogler R ^a   Yankov, R A ^a   Kaschny, J R ^a   Posselt, M ^a   Danilin, A B ^b   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Cent for Analysis of Substances   (Russian Federation)

Author keywords

Cu; Defects; Gettering; Ion implantation; Si

Indexed keywords

ANNEALING; COPPER; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEGASSING; ION IMPLANTATION; IRRADIATION; TEMPERATURE;

DEFECT EVOLUTION; GETTERING;

SILICON;

EID: 0032136035     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00341-3     Document Type: Article

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