High Quality AIN and GaN Grown on Si(111) by gas source molecular beam epitaxy with ammonia

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages W831-W836

  Nikishin, Sergey A ^a   Faleev, Nikolai N ^a   Antipov, Vladimir G ^a   Francoeur, Sebastien ^a   De Peralta, Luis Grave ^a   Seryogin, George A ^a   Holtz, Mark ^a   Prokofyeva, TaT'Yana I ^a   Chu, S N G ^a   Zubrilov, Andrei S ^a   Elyukhin, Vyacheslav A ^a   Nikitina, Irina P ^a   Nikolaev, Andrei ^a   Melnik, Yuriy ^a   Dmitriev, Vladimir ^a   Temkin, Henryk ^a  

^a Department of Electrical and Computer Engineering   (United States)

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[No Author keywords available]

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EID: 33751320369     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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