Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy

Semiconductors

Volumn 33, Issue 10, 1999, Pages 1067-1071

  Zubrilov, A S ^a   Melnik, Yu V ^a   Nikolaev, A E ^a   Jacobson, M A ^a   Nelson, D K ^a   Dmitriev, V A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033212239     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187866     Document Type: Article

References (33)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 13 (1994).
2. S. Nakamura, M. Senoh, S. Naganama, N. Iwasa, T. Yamaba, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys. 35 (1B), L74 (1996).
3. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10 (4), 1237 (1992).
4. S. Porowski, J. Cryst. Growth 166, 583 (1996).
5. T. Detchprohm, K. Hiramatsu, A. Amano, and I. Akasaki, Appl. Phys. Lett. 61, 2688 (1992).
6. Yu. V. Melnik, K. V. Vassilevski, I. P. Nikitina, A. I. Babanin, V. Yu. Davydov, and V. A. Dmitriev, MRS Internet J. Nitride Semicond. Res. 2, 39 (1997).
7. V. V. Belkov, V. M. Botnaryuk, L. M. Fedorov, I. I. Diakonu, V. V. Krivolapchyuk, M. P. Scheglov, and Yu. V. Zhilyaev, Inst. Phys. Conf.Ser. 155, 191 (1997).
8. E. N. Mokhov and Y. A. Vodakov, Inst. Phys. Conf. Ser. 155, 177 (1997).
9. R. J. Molnar, P. Maki, R. Aggarwal, Z. L. Liau, E. R. Brown, I. Melngailis, W. Gotz, L. T. Romano, and N. M. Johnson, Mater. Res. Soc. Symp. Proc. 423, 221 (1996).
10. V. A. Ivantsov, V. A. Sukhoveev, V. I. Nikolaev, I. P. Nikolaev, and V. A. Dmitriev, Fiz. Tverd. Tela (St. Petersburg) 39, 858 (1997) Phys. Solid State 39, 946 (1997)].
11. V. A. Ivantsov, V. A. Sukhoveev, V. I. Nikolaev, I. P. Nikolaev, and V. A. Dmitriev, Fiz. Tverd. Tela (St. Petersburg) 39, 858 (1997) [Phys. Solid State 39, 946 (1997)].
12. Yu. V. Melnik, I. P. Nikitina, A. S. Zubrilov, A. A. Sitnikova, Yu. G. Musikhin, and V. A. Dmitriev, Inst. Phys. Conf. Ser. 142, 863 (1996).
13. V. E. Sizov and K. V. Vassilevski, NATO ASI, Ser. 3. High Technology, Wide Bandgap Electronic Materials, edited by M. A. Prelas et al. (Kluwer Academic Publishers, 1995) 1, p. 427.
14. Yu. V. Melnik, I. P. Nikitina, A. E. Nikolaev, D. V. Tsvetkov, A. A. Sitnikova, and V. A. Dmitriev, Abstracts 1st Europ. Conf. on Silicon Carbide and Related Mater. (Heraklion, Greece, 1996), p. 79.
15. B. Monemar, J. P. Bergman, I. A. Buyanova, W. Li, H. Amano, and I. Akasaki, MRS Internet J. Nitride Semicond. Res. 1, 2 (1996).
16. I. A. Buyanova, J. P. Bergman, and B. Monemar, Appl. Phys. Lett. 69 (9), 1 (1996).
17. A. S. Zubrilov, Yu. V. Melnik, D. V. Tsvetkov, V. E. Bugrov, A. E. Nikolaev, S. I. Stepanov, and V. A. Dmitriev, Fiz. Tekh. Poluprovodn. 31, 616 (1997) Sov. Phys. Semicond. 31, 755 (1997)].
18. A. S. Zubrilov, Yu. V. Melnik, D. V. Tsvetkov, V. E. Bugrov, A. E. Nikolaev, S. I. Stepanov, and V. A. Dmitriev, Fiz. Tekh. Poluprovodn. 31, 616 (1997) [Sov. Phys. Semicond. 31, 755 (1997)].
19. W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 68, 970 (1996).
20. D. K. Nelson, Yu. V. Melnik, A. V. Sel'kin, M. A. Jacobson, V. A. Dmitriev, K. G. Irvine, and C. H. Carter, Jr., Fiz. Tverd. TeIa (St. Petersburg) 38, 822 (1996) Phys. Solid State 38, 940 (1996)].
21. D. K. Nelson, Yu. V. Melnik, A. V. Sel'kin, M. A. Jacobson, V. A. Dmitriev, K. G. Irvine, and C. H. Carter, Jr., Fiz. Tverd. TeIa (St. Petersburg) 38, 822 (1996) [Phys. Solid State 38, 940 (1996)].
22. B. Monemar, J. P. Bergman, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu, and N. Sawaki, International Symposium on Blue Laser and Light Emitting Diodes (Chiba Univ., Japan, 1996).
23. S. Chichibu, T. Azurata, T. Sota, and S. Nakamura, J. Appl. Phys. 79 (5), 2784 (1996).
24. M. A. Jacobson, V. D. Kagan, E. V. Kalinina, D. K. Nelson, A. V. Selkin, V. A. Dmitriev, K. G. Irvine, J. A. Edmond, and C. H. Carter, Jr., in Proceedings of the 23rd International Conference Phys. Semicond. (Berlin, Germany, 1996) p. 569.
25. A. S. Zubrilov, V. I. Nikolaev, D. V. Tsvetkov, V. A. Dmitriev, K. G. Irvine, J. A. Edmond, and C. H. Carter, Jr., Appl. Phys. Lett. 67, 521 (1995).
26. H. Teisseyere, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko, and T. D. Moustakas, J. Appl. Phys. 76, 2429 (1994).
27. Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967).
28. E. Burstein, Phys. Rev. 93, 632 (1954).
29. P. P. Edwards and M. J. Sienko, Phys. Rev. B 17, 2575 (1978).
30. M. F. MacMillan, R. P. Devaty, and W. J. Choyke, Appl. Phys. Lett. 62, 750 (1993).
31. A. S. Barker and M. Ilegems, Phys. Rev. B 7, 743 (1973).
32. C. Wetzel, D. Voim, B. K. Meyer, K. Pessel, S. Nilsson, E. N. Mokhov, and P. G. Baranov, Appl. Phys. Lett. 65 (8), 1033 (1994).
33. M. Ilegems, R. Dingle, and R. A. Cogan, J. Appl. Phys. 43, 3797 (1972).