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Volumn 6, Issue 11, 2006, Pages 2592-2597

Modeling of chemical vapor deposition of large-area silicon carbide thin film

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33751270931     PISSN: 15287483     EISSN: None     Source Type: Journal    
DOI: 10.1021/cg060401b     Document Type: Article
Times cited : (8)

References (29)
  • 17
    • 23344436375 scopus 로고    scopus 로고
    • Vapour phase growth of epitaxial silicon carbide layers
    • Wagner, G.; Schulz, D.; Siche, D. Vapour phase growth of epitaxial silicon carbide layers. Prog. Cryst. Growth Charact. Mater. 2003, 47 (2-3), 139-165.
    • (2003) Prog. Cryst. Growth Charact. Mater. , vol.47 , Issue.2-3 , pp. 139-165
    • Wagner, G.1    Schulz, D.2    Siche, D.3
  • 19
    • 18144434886 scopus 로고    scopus 로고
    • Proceedings of the Third European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, Sept 3-7, 2000
    • Vorob'ev, A. N.; Bogdanov, M. V.; Komissarov, A. E.; Karpov, S. Y.; Bord, O. V.; Lovtsus, A. A.; Makarov, Y. N. Proceedings of the Third European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, Sept 3-7, 2000. In Mater. Sci. Forum 2001, 353-356, 107-110.
    • (2001) Mater. Sci. Forum , vol.353-356 , pp. 107-110
    • Vorob'ev, A.N.1    Bogdanov, M.V.2    Komissarov, A.E.3    Karpov, S.Y.4    Bord, O.V.5    Lovtsus, A.A.6    Makarov, Y.N.7
  • 28
    • 0003464216 scopus 로고    scopus 로고
    • NIST Standard Reference Database No. 69
    • NIST Chemistry WebBook. 2005, NIST Standard Reference Database No. 69.
    • (2005) NIST Chemistry WebBook


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.