Influence of silicon gas-to-particle conversion on SiC CVD in a cold-wall rotating-disc reactor

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 107-110

  Vorob'ev, A N ^a   Bogdanov, M V ^a   Komissarov, A E ^a   Karpov, S Yu ^a   Bord, O V ^a   Lovtsus, A A ^a   Makarov, Yu N ^b  

^a SOFT IMPACT LTD   (Russian Federation)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CONDENSATION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; NUCLEATION; PHASE DIAGRAMS; SILICON; SURFACE PHENOMENA; WALL FLOW;

COLD WALL ROTATING DISC REACTOR; GAS MIXTURE DEPLETION; GAS PHASE NUCLEATION; GROWTH RATE; PRECURSOR FLOW RATES; SILICON GAS TO PARTICLE CONVERSION;

SILICON CARBIDE;

EID: 18144434886     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.107     Document Type: Article

References (4)

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3. A.N. Vorob'ev, A.E. Komissarov, A.S. Segal, Yu.N. Makarov, S.Yu. Karpov, A.I. Zhmakin, R. Rupp, Materials Science and Engineering, B61-62 (1999), p. 176.
4. A.N. Vorob'ev, Yu.E. Egorov, Yu.N. Makarov, A.I. Zhmakin, A.O. Galyukov, R. Rupp, Materials Science and Engineering, B61-62 (1999), p. 172.