Thin film growth of silicon carbide from methyl-trichloro-silane by RF plasma-enhanced CVD

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 658-661

  Kaneko, Tsutomu ^a   Miyakawa, Noriaki ^a   Sone, Hayato ^a   Iijima, Makoto ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Amorphous; Composition; Methyl trichloro silane; Plasma assisted CVD; SiC; Thin film

Indexed keywords

AMORPHOUS FILMS; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; COMPOSITION; DECOMPOSITION; FILM GROWTH; SEMICONDUCTING FILMS; SILANES; SILICON WAFERS; THIN FILMS;

METHYLTRICHLOROSILANE; PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION;

SILICON CARBIDE;

EID: 0031547504     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00030-4     Document Type: Article

References (6)

1. T. Kaneko, J. Crystal Growth 69 (1984) 1.
2. T. Kaneko, J. Crystal Growth 126 (1993) 354.
3. J. Bullot and M.P. Schmidt, Phys. Status Solidi (b) 143 (1987) 345.
4. D.A. Anderson and W.E. Spear, Phil. Mag. 35 (1977) 1.
5. T. Kaneko, H. Sone, N. Miyakawa and M. Naka, in: Silicon Carbide and Related Materials, Ed. H. Matsunami, Institute of Physics Conference Series, Vol. 142 (IOP, 1996), ch. 1, p. 53.
6. See, for example: E.W. Mcdaniel, in: Collision Phenomena in Ionized Gases (Wiley, New York, 1964).