Simulation of chemical-vapor-deposited silicon carbide for a cold wall vertical reactor

Journal of Crystal Growth

Volumn 178, Issue 4, 1997, Pages 505-512

  Lee, Y L ^a,b   Sanchez, J M ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b Ssangyong Motor Company   (South Korea)

Author keywords

CVD; Finite volume method; SiC; TMS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL METHODS; COMPUTER SIMULATION; FILM GROWTH; FINITE VOLUME METHOD; HEAT TRANSFER; MASS TRANSFER; REACTION KINETICS; SILANES; THERMAL DIFFUSION IN SOLIDS;

COLD WALL VERTICAL REACTOR; TETRAMETHYLSILANES;

SILICON CARBIDE;

EID: 0031177420     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00090-0     Document Type: Article

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