A study on the interface and bulk charge density of AlN films with sputtering pressure

Vacuum

Volumn 81, Issue 4, 2006, Pages 494-498

  Kar, J P ^a   Bose, G ^a   Tuli, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

AlN; Electrical properties; SEM; Sputtering; XRD

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; SURFACE ROUGHNESS; X RAY DIFFRACTION;

ABSORPTION BAND; BULK CHARGE DENSITY; INTERFACE STATE DENSITY; X-RAY DIFFRACTOGRAM;

THIN FILMS;

EID: 33750980968     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2006.07.006     Document Type: Article

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