Effect of the deposition geometry on the electrical properties within Tin-doped indium oxide film deposited under a given RF magnetron sputtering condition

Thin Solid Films

Volumn 401, Issue 1-2, 2001, Pages 229-234

  You, D J ^a   Choi, S K ^a   Han, H S ^b   Lee, J S ^b   Lim, C B ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Film density; Incidence angle with deposition position; ITO thin films; Resistivity

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; ELECTRON SCATTERING; GRAIN SIZE AND SHAPE; MAGNETRON SPUTTERING; SEMICONDUCTING INDIUM COMPOUNDS;

TIN DOPED INDIUM OXIDE (ITO) FILMS;

SEMICONDUCTING FILMS;

EID: 0035904972     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01488-2     Document Type: Article

References (22)