Dependence of process parameters on stress generation in aluminum thin films

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 3, 2004, Pages 482-486

  Horsfall, Alton B ^a   Wang, Kai ^a   Dos Santos, Jorge M M ^a   Soare, Sorin M ^a   Bull, Steve J ^a   Wright, Nick G ^a   O'Neill, Anthony G ^a   Terry, Johnathan G ^b   Walton, Anthony J ^b   Gundlach, Alan M ^b   Stevenson, J Tom M ^b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Integrated circuit reliability; Interconnect; Metallization; Reliability; Stress

Indexed keywords

ALUMINUM; FABRICATION; INTEGRATED CIRCUITS; METALLIZING; OPTICAL INTERCONNECTS; RELIABILITY; SENSORS; STRESSES;

INTEGRATED CIRCUIT RELIABILITY; INTERCONNECTS; PROCESS PARAMETERS; STRESS;

THIN FILMS;

EID: 19944391292     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.829389     Document Type: Article

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