Interstitial-mediated mechanisms of As and P diffusion in Si: Gradient-corrected density-functional calculations

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 19, 2006, Pages

  Harrison, Scott A ^a   Edgar, Thomas F ^a   Hwang, Gyeong S ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33750725399     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.195202     Document Type: Article

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