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Volumn 87, Issue 20, 2005, Pages 1-3

Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; BORON; DIFFUSION; ETCHING; LOW TEMPERATURE EFFECTS;

EID: 27744442207     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2130397     Document Type: Article
Times cited : (8)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.