Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers

Journal of Lightwave Technology

Volumn 24, Issue 1, 2006, Pages 536-542

  Chang, Yi An ^c   Chen, Jun Rong ^c,d   Kuo, Hao Chung ^a   Kuo, Yen Kuang ^d   Wang, Shing Chung ^a,b,c  

^a IEEE   (Taiwan)

^b OSA ^*  (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

850 nm VCSEL; Electronic blocking layer; Gain modeling; InAlGaAs AlGaAs; MOCVD; Semiconductor lasers

Indexed keywords

ELECTRONIC BLOCKING LAYER; GAIN CARRIER CHARACTERISTICS; GAIN MODELING; LOWER TRANSPARENCY CARRIER CONCENTRATION;

BANDWIDTH; CURRENT DENSITY; ELECTRIC CURRENTS; ENERGY GAP; GAIN CONTROL; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; WAVELENGTH;

SURFACE EMITTING LASERS;

EID: 33750534614     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2005.860156     Document Type: Article

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