Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs

Journal of Lightwave Technology

Volumn 22, Issue 12, 2004, Pages 2828-2833

  Chang, Ya Hsien ^a   Kuo, H C ^a   Lai, Fang I ^a   Chang, Yi An ^a   Lu, C Y ^a   Laih, L H ^b   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b M Comm Corporation   (Taiwan)

Author keywords

High speed electronics; InGaAsP InGaP; Strain compensated; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

CALCULATIONS; COMPOSITION; ELECTRIC CURRENTS; LIFE CYCLE; LIGHT MODULATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN; THERMAL EFFECTS;

HIGH SPEED ELECTRONICS; INDIUM GALLIUM ARSENIC PHOSPHIDE; INDIUM GALLIUM PHOSPHIDE; MODULATION CURRENT EFFICIENCY; STRAIN COMPENSATED MULTIPLE QUANTUM WELL; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS);

SEMICONDUCTOR LASERS;

EID: 11244252995     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2004.834835     Document Type: Article

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