Using strained (AlxGa1-x)yIn1-yAszP 1-z system materials to improve the performance of 850 nm surface- and edge-emitting lasers

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1002-1004

  Sale, T E ^a,b   Amamo, C ^b   Ohiso, Y ^b   Kurokawa, T ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006488946     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119708     Document Type: Article

References (10)

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