Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 μm) region diode lasers

IEEE Photonics Technology Letters

Volumn 12, Issue 6, 2000, Pages 603-605

  Tansu, N ^a   Zhou, D ^a   Mawst, L J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIBER OPTICS; INFRARED RADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL DATA STORAGE; SEMICONDUCTING INDIUM COMPOUNDS;

OPTICAL THICKNESS; SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0034204923     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.849057     Document Type: Article

References (13)

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